DESCRIPTION
HyperX HX316C10F/8 is a 1G x 64-bit (8GB) DDR3-1600 CL10 SDRAM (Synchronous DRAM) 2Rx8 memory module, based on sixteen 512M x 8-bit DDR3 FBGA components. This module has been tested to run at DDR3-1600 at a low latency timing of 10-10-10 at 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section below. The JEDEC standard electrical and mechanical specifications are as follows:
Note: The PnP feature offers a range of speed and timing options to support the widest variety of processors and chipsets. Your maximum speed will be determined by your BIOS.
PnP JEDEC TIMING PARAMETERS:
• DDR3-1600 CL10-10-10 @1.5V
• DDR3-1333 CL9-9-9 @1.5V
• DDR3-1066 CL7-7-7 @1.5V
SPECIFICATIONS
• CL(IDD): 10 cycles
• Row Cycle Time (tRCmin): 48.125ns (min.)
• Refresh to Active/Refresh Command Time (tRFCmin): 260ns (min.)
• Row Active Time (tRASmin): 37.5ns (min.)
• Maximum Operating Power: TBD W*
• UL Rating: 94 V - 0
• Operating Temperature: 0° C to 85° C
• Storage Temperature: -55° C to +100° C
*Power will vary depending on the SDRAM used.
FEATURES
• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address "000†only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• Height 1.291†(32.80mm) w/heatsink, double sided component